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Thursday, July 30, 2020 | History

4 edition of Amorphous Semiconductor Technologies & Devices, 1984 (Japan Annual Review in Electronics, Computers & Telecommunications) found in the catalog.

Amorphous Semiconductor Technologies & Devices, 1984 (Japan Annual Review in Electronics, Computers & Telecommunications)

Y. Hamakawa

Amorphous Semiconductor Technologies & Devices, 1984 (Japan Annual Review in Electronics, Computers & Telecommunications)

by Y. Hamakawa

  • 393 Want to read
  • 24 Currently reading

Published by Elsevier Science Publishing Company .
Written in English

    Subjects:
  • Electronics - Semiconductors,
  • Electronic devices & materials,
  • Technology & Industrial Arts

  • The Physical Object
    FormatHardcover
    Number of Pages330
    ID Numbers
    Open LibraryOL10261138M
    ISBN 100444875840
    ISBN 109780444875846

    Amorphous and Microcrystalline Semiconductor Devices, Volume 2: Materials and Device Physics. By (author): Jerzy Kanicki. Amorphous and Microcrystalline Semiconductor Devices, Volume 2: Materials and Device Physics. By (author This book is not available from inventory but can be printed at your request and delivered within weeks. The serially connected devices comprising the AAT with a single MoS 2 (n-type)-based FET or with a single rubrene-NS (p-type)-based FET were fabricated to investigate inverter characteristics, which can be advantageous compared to the conventional complementary metal-oxide semiconductor employed in a binary logic circuit.

    Amorphous solids (including glassy and non-crystalline solids) are ubiquitous since the vast majority of solids naturally occurring in our world are amorphous. Although the field is diverse and complex, this three-volume set covers the vast majority of the important concepts needed to understand these materials and their principal practical. Thin Amorphous Core Material for Power Applications Paul McCloskey, Santosh Kulkarni, Ansar Masood, Cian O’Mathuna • Complements advances in semiconductor technologies including wide-band gap devices. 3 Kolar et al* Commercial magnetic thin films Amorphous and nanocrystaline tape-wound cores 8.

    Shur's book tends to present subjects more in-depth than most device physics texts. For example, he will point out (as in van der Ziel's older texts) that the generation rate in a diode space charge region is not uniform, and so when he models things like the space charge region ("n=2") dark current density contribution of diode leakage current, his expressions will be a little more complex Cited by:   This development is likely to revolutionize semiconductor technology by allowing for multiple-device integration on insulating layers. In addition to crystalline Si films on plastic substrates, we have made thin film transistors(TFT) in amorphous Si on polyimide substrates.


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Amorphous Semiconductor Technologies & Devices, 1984 (Japan Annual Review in Electronics, Computers & Telecommunications) by Y. Hamakawa Download PDF EPUB FB2

Get this from a library. Amorphous semiconductor technologies & devices: [Yoshihiro Hamakawa;]. title = {Amorphous semiconductor technologies and devices}, author = {Hamakawa, Y.}, abstractNote = {This volume presents an overview of the recent progress in the field of amorphous silicon and its alloys, demonstrating the strong potential need for a low-cost solar cell in the photovoltaic project and other new application fields.

Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. Developed from both a theoretical and experimental viewpoint.

COVID Resources. Reliable information about the coronavirus (COVID) is available from the World Health Organization (current situation, international travel).Numerous and frequently-updated resource results are available from this ’s WebJunction has pulled together information and resources to assist library staff as they consider how to handle coronavirus.

Yoshihiro Hamakawa is the author of Amorphous Semiconductor Technologies & Devices ( avg rating, 0 ratings, 0 reviews, published ), Amorphous Semi. The book is concerned with a complex of problems associated with photostimulated processes of atomic diffusion and defect formation and their effect on the properties of a wide class of crystalline and amorphous semiconductors and on the degradation of semiconductor devices.

In particular, attention is given to the interaction of laser. Polycrystalline and Amorphous Thin Films and Devices is a compilation of papers that discusses the electronic, optical, and physical properties of thin material layers and films.

Other papers review the problems encountered in these thin layers in active semiconductor devices and passive technologies. and researchers in thin-film. In a-InP, a band near cm-1 is assigned to P–P linkages, revealing the presence of ‘wrong bonds’ in the amorphous semiconductor.

a-Si x Ge 1-x alloys show features near, and cm-1, assigned to Si–Si, Ge–Ge, and Si–Ge bonds (Lucovsky and Pollard, ). The relative intensities vary systematically with Si:Ge ratio. Naci Balkan was in semiconductor research fromwhen he started his PhD at the University of Glasgow to his death on J At the time of his PhD, his main interest was in the field of amorphous semiconductors, in particular, Ge and Si grown with thermal evaporation or RF : Springer International Publishing.

Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system.

An Institute lecture series on "Fundamentals of Amorphous Materials and Devices" was held during with distinguished speakers from universities and industry. The explosive growth in the semiconductor industry has caused a rapid evolution of thin film materials that lend themselves to the fabrication of state-of-the-art semiconductor devices.

Early in the s an old research technique named chemical vapour phase deposition (CVD), which has several unique advantages, developed into the most widely. Physics of amorphous semiconductor devices: JanuaryLos Angeles, California. Bellingham, Wash., USA: The Society. MLA Citation. Adler, David. and Society of Photo-optical Instrumentation Engineers.

and University of Alabama in Huntsville. Center for Applied Optics. AMORPHOUS SEMICONDUCTOR TECHNOLOGIES & DEVICES, Japan Annual Review in Electronics, Computers & Telecommunications. by Hamakawa, Y. (Ed). North-Holland Publishing Company, Hardcover.

Very Good. Red boards with gild printing on black, has labels on spine and front cover and REP, wear/soil.

All standard library markings. Thank you for your purchase from Sunset Books. Joamopoulos and G. Lucovsky, eds. The Physics of Hydrogenated Amorphous Silicon, Topics in Applied Phys., Vol. 55–56, Springer, Berlin, Google ScholarCited by: 2.

Technology and Applications of Amorphous Silicon (Springer Series in Materials Science Book 37) - Kindle edition by Street, Robert A. Download it once and read it on your Kindle device, PC, phones or tablets. Use features like bookmarks, note taking and highlighting while reading Technology and Applications of Amorphous Silicon (Springer Series in Materials Science Book 37).5/5(1).

Semiconductor devices, the basic components of integrated circuits, are responsible for the rapid growth of the electronics industry over the past fifty years.

Because there is a growing need for faster and more complex systems for the information age, existing semiconductor devices are constantly being studied for improvement, and new ones are. Main Hydrogenated Amorphous Silicon, Part D Device Applications. Hydrogenated Amorphous Silicon, Part D Device Applications R.

Willardson. Categories: Chemistry\\Physical Chemistry. Year: Publisher: Elsevier, Academic Press. Language: english. Pages: / ISBN ISBN: You can write a book review and share. Amorphous silicon solar cells.

Hydrogenated amorphous silicon was introduced as a material with a potential for semiconductor devices in the mids and is the first thin-film solar cell material that has reached the stage of large-scale production (∼20 MW p /year at present).

Amorphous silicon has, in the visible range of the spectrum, a Cited by: Semiconductors is a journal that сovers semiconductor theory, transport phenomena in semiconductors, optics, magnetooptics, and electrooptics of semiconductors, devices based on semiconductors and nanostructures including lasers, semiconductor surface physics, and structural defects in semiconductors.

PEER REVIEW. Semiconductors is a peer reviewed journal. Abstract. In a recent few years, a remarkable progress has been seen in both physics and technologies of 1 a-Si (hydrogenated amorphous silicon) as a new optoelectronic material.

Particularly, its significant properties such as excellent photoconductivity with a considerably high optical absorption coefficient for visible light, and ability to produce a non-epitaxial film growth on any foreign Author: Yoshihiro [email protected]{osti_, title = {The physics and applications of amorphous semiconductors}, author = {Madan, A and Shaw, M P}, abstractNote = {This is a treatise on the physics and applications of the new emerging technology of amorphous semiconductors.

The authors focus upon research problems such as the optimization of device performance while also presenting the general physics of amorphous.A liquid-crystal display (LCD) is a flat-panel display or other electronically-modulated optical device that uses the light-modulating properties of liquid crystals.

Liquid Crystal Displays are already widely used in consumer electronics, but research and development is still ongoing. The shifting focus of research follows a pattern of improved definition, increased display size, wider viewing.